Crystallographic aspects of pore formation in gallium arsenide and silicon
- Ross, F.M.
- Oskam, G.
- Searson, P.C.
- Macaulay, J.M.
- Liddle, J.A.
ISSN: 0141-8610
Argitalpen urtea: 1997
Alea: 75
Zenbakia: 2
Orrialdeak: 525-539
Mota: Artikulua
Aldizkaria:
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties